公开(公告)号：US20240321910A1

公开(公告)日：2024-09-26

申请号：US18731895

申请日：2024-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook-tae KIM ,  Jin-gyun KIM ,  Soo-jin HONG

IPC: H01L27/146 ,  H04N25/40

CPC classification number: H01L27/14605 ,  H04N25/40

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.

公开(公告)号：US20230275104A1

公开(公告)日：2023-08-31

申请号：US18144969

申请日：2023-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook-tae KIM ,  Jin-gyun KIM ,  Soo-jin HONG

IPC: H01L27/146 ,  H04N25/40

CPC classification number: H01L27/14605 ,  H04N25/40

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.

公开(公告)号：US20220059585A1

公开(公告)日：2022-02-24

申请号：US17519701

申请日：2021-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook-tae KIM ,  Jin-gyun KIM ,  Soo-jin HONG

IPC: H01L27/146 ,  H04N5/341

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.