公开(公告)号：US20180166150A1

公开(公告)日：2018-06-14

申请号：US15794150

申请日：2017-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Won LEE ,  In Cheol NAM

IPC: G11C29/44 ,  G11C29/12 ,  G11C29/00 ,  G06F12/08

CPC classification number: G11C29/4401 ,  G06F12/08 ,  G11C29/00 ,  G11C29/12 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/4402

Abstract: A memory device includes a memory cell array, a comparator, and a virtual fail generator. The memory cell array includes memory cells. The comparator determines whether a fail of a first memory cell of the memory cell array corresponding to a first address is generated, by comparing data stored in the first memory cell with an expected value. The virtual fail generator generates a second address based on the first address provided from the comparator, in response to the comparator determining that the fail of the first memory cell is generated. The first memory cell and a second memory cell corresponding to the second address are repaired by spare memory cells in response to a repair command.