公开(公告)号：US11656929B2

公开(公告)日：2023-05-23

申请号：US17345276

申请日：2021-06-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mi Jin Lee ,  Dong-Yoon Kim ,  Min-Hyouk Kim ,  Sung-Joon Kim ,  Sung Up Moon ,  Jong Young Lee

IPC: G06F11/07

CPC classification number: G06F11/0778 ,  G06F11/073 ,  G06F11/0772 ,  G06F11/0784 ,  G06F11/0787 ,  G06F11/0793

Abstract: A memory module includes; dynamic random access memories (DRAMs), a controller configured to control operation of the DRAMs, and an active device configured, in response to detection of an error occurring in at least one of the DRAMs, to generate an interrupt and store error information corresponding to the error.