公开(公告)号：US20210202547A1

公开(公告)日：2021-07-01

申请号：US16922594

申请日：2020-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongjin CHO ,  Eun-A KWAK ,  Mi-Jin KWON ,  Young-Mi LEE

IPC: H01L27/146

Abstract: An image sensor includes a first pixel row and a second pixel row, each of the first and second pixel rows including pixels arranged in a first direction, the first and second pixel rows being adjacent to each other in a second direction crossing the first direction. The image sensor further includes device isolation patterns disposed between the first and second pixel rows and spaced apart from each other in the first direction, and supporting patterns disposed between the first and second pixel rows and interposed between the device isolation patterns. Each of the supporting patterns is connected to corresponding ones of the pixels.

公开(公告)号：US20220382249A1

公开(公告)日：2022-12-01

申请号：US17566151

申请日：2021-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sooyong LEE ,  Mi-Jin KWON ,  Dongho KIM ,  Seunghune YANG

IPC: G05B19/4099

Abstract: A method for manufacturing a semiconductor device, includes receiving a first layout including patterns for the manufacturing of the semiconductor device, generating a second layout by performing machine learning-based process proximity correction (PPC) based on features of the patterns of the first layout, generating a third layout by performing optical proximity correction (OPC) on the second layout, and performing a multiple patterning process based on the third layout. The multiple patterning process includes patterning first-type patterns, and patterning second-type patterns. The machine learning-based process proximity correction is performed based on features of the first-type patterns and features of the second-type patterns.