公开(公告)号：US20250133890A1

公开(公告)日：2025-04-24

申请号：US19005626

申请日：2024-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyong PARK ,  Dongho KIM ,  Hyunjoon KIM ,  Seogwoo HONG ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H10H29/14 ,  B82Y20/00 ,  H10H20/01 ,  H10H20/851 ,  H10H20/855

Abstract: A display apparatus includes a driving substrate including a plurality of grooves, micro light-emitting devices provided in the plurality of grooves and configured to emit light of a first color, and a color conversion layer provided on the micro light-emitting devices and configured to convert the light of the first color into light of at least one second color, wherein the color conversion layer includes light blocking patterns spaced apart from the micro light-emitting devices and spaced apart from each other on a same plane, a nano-porous layer provided between adjacent ones of the light blocking patterns, spaced apart from the micro light-emitting devices, and including a plurality of nano-pores, and quantum dots impregnated in the nano-porous layer and configured to convert the light of the first color into the light of the at least one second color.

公开(公告)号：US20250113659A1

公开(公告)日：2025-04-03

申请号：US18979907

申请日：2024-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD,

Inventor： Dongho KIM ,  Kyungwook Hwang

IPC: H01L33/12 ,  H01L25/075 ,  H01L33/00 ,  H01L33/04 ,  H01L33/10 ,  H01L33/32

Abstract: Provided is a light emitting device including a buffer layer, a body provided on the buffer layer, the body including a first semiconductor layer, an active layer, and a second semiconductor layer, a reflective layer configured to reflect light incident from the active layer, and a scattering pattern provided between the first semiconductor layer and the buffer layer, the scattering pattern being configured to scatter the light incident from the active layer and light incident from the reflective layer.

公开(公告)号：US20250006542A1

公开(公告)日：2025-01-02

申请号：US18442908

申请日：2024-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtek OH ,  Kyungwook HWANG ,  Dongho KIM ,  Joonyong PARK ,  Sanghoon SONG ,  Minchul YU ,  Junsik HWANG

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/68

Abstract: A semiconductor chip wet transfer method includes: preparing a transfer substrate that includes a plurality of recesses; supplying a liquid that includes semiconductor chips onto the plurality of recesses of the transfer substrate; aligning the semiconductor chips in the plurality of recesses by sweeping, with an align bar, an upper surface of the transfer substrate supplied with the liquid; and performing cleaning by removing semiconductor chips that are not aligned in the plurality of recesses by using a first magnetic force generating device disposed facing a lower surface of the transfer substrate.

公开(公告)号：US20240030161A1

公开(公告)日：2024-01-25

申请号：US18480660

申请日：2023-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongho KIM ,  Jihwang KIM

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/31

CPC classification number: H01L23/562 ,  H01L23/49822 ,  H01L23/49811 ,  H01L23/3128 ,  H01L24/32 ,  H01L23/49838 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/73204

Abstract: A semiconductor package including a semiconductor chip, a lower redistribution layer under the semiconductor chip, the lower redistribution layer including a lower insulating layer at a central region and at a portion of an edge region, and a trench at a remaining portion of the edge region, a plurality of outer connecting terminals under the lower redistribution layer, a molding layer including a first molding section and the second molding section, the first molding section being on the lower redistribution layer and surrounding a side surface of the semiconductor chip and the second molding section being in the trench and contacting a side surface of the lower insulating layer, and an upper redistribution layer on the molding layer may be provided. The side surface of the lower insulating layer and a side surface of the second molding section may be coplanar with each other.

公开(公告)号：US20230400604A1

公开(公告)日：2023-12-14

申请号：US18196583

申请日：2023-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Dongho KIM ,  Junsik HWANG ,  Sanghoon SONG

IPC: G02B1/00 ,  G02F1/015 ,  H01L33/10 ,  G02B5/20 ,  G02B1/14 ,  G02B3/00

CPC classification number: G02B1/005 ,  G02F1/0151 ,  H01L33/10 ,  G02B2207/107 ,  G02B1/14 ,  G02B3/0037 ,  G02B5/206

Abstract: Disclosed are a color conversion structure, a display apparatus, and a method for manufacturing the color conversion structure. The color conversion structure includes a base, a photonic crystal structure provided on the base, and quantum dots included in the photonic crystal structure. The color conversion structure has a transferable structure.

公开(公告)号：US20220382249A1

公开(公告)日：2022-12-01

申请号：US17566151

申请日：2021-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sooyong LEE ,  Mi-Jin KWON ,  Dongho KIM ,  Seunghune YANG

IPC: G05B19/4099

Abstract: A method for manufacturing a semiconductor device, includes receiving a first layout including patterns for the manufacturing of the semiconductor device, generating a second layout by performing machine learning-based process proximity correction (PPC) based on features of the patterns of the first layout, generating a third layout by performing optical proximity correction (OPC) on the second layout, and performing a multiple patterning process based on the third layout. The multiple patterning process includes patterning first-type patterns, and patterning second-type patterns. The machine learning-based process proximity correction is performed based on features of the first-type patterns and features of the second-type patterns.

公开(公告)号：US20220285578A1

公开(公告)日：2022-09-08

申请号：US17478468

申请日：2021-09-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongho KIM ,  Kyungwook Hwang

IPC: H01L33/06 ,  H01L33/10 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L25/16 ,  H01L25/18

Abstract: Provided is a light-emitting diode including a first-light emitting cell, a second light-emitting cell, and a third light-emitting cell that are sequentially provided in one direction and configured to emit light of different colors from each other, a first tunnel junction provided between the first light-emitting cell and the second light-emitting cell, the first tunnel junction being configured to electrically connect the first light-emitting cell and the second light-emitting cell and induce lateral current spreading, and a second tunnel junction provided between the second light-emitting cell and the third light-emitting cell, the second tunnel junction being configured to electrically connect the second light-emitting cell and the third light-emitting cell and induce lateral current spreading.

公开(公告)号：US20220069161A1

公开(公告)日：2022-03-03

申请号：US17227538

申请日：2021-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo PARK ,  Junhee CHOI ,  Nakhyun KIM ,  Dongho KIM ,  Joohun HAN

IPC: H01L33/14 ,  H01L33/04 ,  H01L33/56 ,  H01L27/15 ,  H01L33/00

Abstract: A nanorod light-emitting device is provided. The nanorod light-emitting device includes a first semiconductor layer, a light-emitting layer on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, at least one conductive layer disposed between a central portion of a lower surface of the light-emitting layer and the first semiconductor layer, or between a central portion of an upper surface of the light-emitting layer and the second semiconductor layer, at least one current blocking layer that surrounds a side surface of the at least one conductive layer, and an insulating film that surrounds a side surface of the second semiconductor layer, a side surface of the light-emitting layer, and a side surface of the at least one current blocking layer.

公开(公告)号：US20210242101A1

公开(公告)日：2021-08-05

申请号：US16928159

申请日：2020-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongho KIM ,  Jongbo SHIM ,  Hwanpil PARK ,  Jangwoo LEE

IPC: H01L23/31 ,  H01L25/065 ,  H01L23/00

Abstract: A semiconductor package is disclosed. The disclosed semiconductor package includes a substrate having bonding pads at an upper surface thereof, a lower semiconductor chip, at least one upper semiconductor chip disposed on the lower semiconductor chip, and a dam structure having a closed loop shape surrounding the lower semiconductor chip. The dam structure includes narrow and wide dams disposed between the lower semiconductor chip and the bonding pads. The wide dam has a greater inner width than the narrow dam. The semiconductor packages further includes an underfill disposed inside the dam structure and being filled between the substrate and the lower semiconductor chip.

公开(公告)号：US20160238447A1

公开(公告)日：2016-08-18

申请号：US15045895

申请日：2016-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  IMEC VZW

Inventor： Seongho CHO ,  Tom CLAES ,  Dongho KIM

IPC: G01J3/02 ,  G02B6/124 ,  G02B6/27 ,  A61B5/1455 ,  G01J3/18 ,  G01N21/47 ,  A61B5/145 ,  G02B6/10 ,  G01N21/27

Abstract: Provided are a dual coupler device configured to receive lights of different polarization components, a spectrometer including the dual coupler device, and a non-invasive biometric sensor including the spectrometer. The dual coupler device may include, for example, a first coupler layer configured to receive a light of a first polarization component among incident lights. and a second coupler layer configured to receive a light of a second polarization component among the incident lights, wherein a polarization direction of the light of the first polarization component is perpendicular to a polarization direction of the light of the second polarization component. The first coupler layer and the second coupler layer may be spaced apart from each other and extended along a direction in which the light propagates in the first coupler layer and the second coupler layer.

Abstract translation: 提供了被配置为接收不同偏振分量的光的双耦合器件，包括双耦合器件的光谱仪和包括光谱仪的非侵入式生物测量传感器。 双耦合器件可以包括例如被配置为在入射光中接收第一偏振分量的光的第一耦合器层。 以及第二耦合层，被配置为在入射光中接收第二偏振分量的光，其中第一偏振分量的光的偏振方向垂直于第二偏振分量的光的偏振方向。 第一耦合器层和第二耦合器层可以彼此间隔开并且沿着光在第一耦合器层和第二耦合器层中传播的方向延伸。