公开(公告)号：US11064958B2

公开(公告)日：2021-07-20

申请号：US15879352

申请日：2018-01-24

Applicant: Samsung Electronics Co., Ltd

Inventor： Min Cheol Park ,  Jong Ha Lee ,  Dong Wook Kim ,  Eun Mi Jung

IPC: A61B6/00 ,  G21K1/10

Abstract: The present disclosure provides an X-ray imaging apparatus and control method thereof, for guiding the user to intuitively recognize an actual dose of X-rays and select a proper dose, ultimately a condition for low dose of X-ray irradiation by providing the user with information about an actual X-ray dose to which an X-ray filter effect is reflected. In accordance with an aspect of the disclosure, an X-ray imaging apparatus includes: an X-ray source configured to generate and irradiate X-rays according to an X-ray irradiation condition including at least one of a tube voltage, a tube current, or a filter; a display configured to provide a graphic user interface to receive a choice about the X-ray irradiation condition; and a controller configured to obtain a parameter that represents a dose of radiation, to which an influence of the filter is reflected, based on the selected X-ray irradiation condition and control the display to display the parameter.

公开(公告)号：US11856772B2

公开(公告)日：2023-12-26

申请号：US16930381

申请日：2020-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Won Lee ,  Tae Hun Kim ,  Min Cheol Park ,  Hye Ri Shin ,  Jun Hee Lim ,  Si Yeon Cho

IPC: H01L27/115 ,  H10B43/27 ,  G11C8/14 ,  G11C7/18

CPC classification number: H10B43/27 ,  G11C7/18 ,  G11C8/14

Abstract: A nonvolatile memory device and method of fabricating same, the nonvolatile memory device including a substrate; a first semiconductor layer on the substrate; an etching stop film including a metal oxide on the first semiconductor layer; a mold structure including second semiconductor layers and insulating layers alternately stacked on the etching stop film; a channel hole penetrating through at least one of the mold structure, the etching stop film, the second semiconductor layer and the substrate; and a channel structure extending along a side wall of the channel hole, including an anti-oxidant film, a first blocking insulation film, a second blocking insulation film, a charge storage film, a tunnel insulating film and a channel semiconductor sequentially formed along the side wall of the channel hole. The first semiconductor layer contacts the first blocking insulation film, the second blocking insulation film, the charge storage film, and the tunnel insulating film.