公开(公告)号：US20250022716A1

公开(公告)日：2025-01-16

申请号：US18650213

申请日：2024-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Jung KIM ,  Sung Woo KIM ,  Hyun Seo SHIN ,  Min Jeong CHO ,  Min Su CHOI

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/311 ,  H01L29/66 ,  H10B12/00

Abstract: A method of fabricating a semiconductor device includes providing a substrate, forming a target film, a first mask film, a second mask film, and an upper mask pattern on the substrate, forming a first spacer pattern that includes a first line portion and a second line portion, and a folding portion that connects the first line portion and the second line portion, forming a slit mask pattern that partially covers the first spacer pattern, forming a first mask pattern by patterning the second mask film using the slit mask pattern and the first spacer pattern as an etching mask, forming a second spacer pattern, forming a second mask pattern by patterning the first mask film using the second spacer pattern as an etching mask, and forming a plurality of target patterns by patterning the target film using the second mask pattern as an etching mask.