公开(公告)号：US10409683B2

公开(公告)日：2019-09-10

申请号：US15624745

申请日：2017-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Seok Ko ,  Hyun-Jung Shin ,  Jeong-Uk Kang ,  Ji-Hyung Park

IPC: G06F11/00 ,  G06F11/10 ,  G06F3/06

Abstract: A data storage system configured to perform a data rebuild operation via a reduced number of read requests includes a host and a redundant array of independent disks (RAID) device including a plurality of data storage devices. When the host receives data of a first region and data of a second region of a read-requested region of each of the data storage devices in response to a rebuild request, the host receives failed address list information of the second region. The first region is a normal region, and the second region is a faulty region. The host rebuilds the data of the second region based on the failed address list information.

公开(公告)号：USRE50408E1

公开(公告)日：2025-04-29

申请号：US17470041

申请日：2021-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Seok Ko ,  Hyun-Jung Shin ,  Jeong-Uk Kang ,  Ji-Hyung Park

IPC: G06F11/10 ,  G06F3/06

Abstract: A data storage system configured to perform a data rebuild operation via a reduced number of read requests includes a host and a redundant array of independent disks (RAID) device including a plurality of data storage devices. When the host receives data of a first region and data of a second region of a read-requested region of each of the data storage devices in response to a rebuild request, the host receives failed address list information of the second region. The first region is a normal region, and the second region is a faulty region. The host rebuilds the data of the second region based on the failed address list information.

公开(公告)号：US12124368B2

公开(公告)日：2024-10-22

申请号：US17740927

申请日：2022-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Geun Kim ,  In-Hwan Doh ,  Joo-Young Hwang ,  Seung-Uk Shin ,  Min-Seok Ko ,  Jae-Yoon Choi

IPC: G06F12/02 ,  G06F9/38 ,  G06F12/10

CPC classification number: G06F12/0253 ,  G06F9/3816 ,  G06F12/10 ,  G06F2212/1044 ,  G06F2212/657

Abstract: A storage device includes a non-volatile memory including a plurality of memory blocks. The storage device performs an alignment operation in response to receipt of an align command. The alignment operation converts a received logical address of a logical segment into a physical address and allocates the physical address to a physical block address corresponding to a free block. The storage device is further configured to performs a garbage collection in units of the physical block address that indicates one memory block.

公开(公告)号：US11341043B2

公开(公告)日：2022-05-24

申请号：US16543093

申请日：2019-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Geun Kim ,  In-Hwan Doh ,  Joo-Young Hwang ,  Seung-Uk Shin ,  Min-Seok Ko ,  Jae-Yoon Choi

IPC: G06F12/02 ,  G06F9/38 ,  G06F12/10

Abstract: A storage device includes a non-volatile memory including a plurality of memory blocks. The storage device performs an alignment operation in response to receipt of an align command. The alignment operation converts a received logical address of a logical segment into a physical address and allocates the physical address to a physical block address corresponding to a free block. The storage device is further configured to performs a garbage collection in units of the physical block address that indicates one memory block.

公开(公告)号：US20200159656A1

公开(公告)日：2020-05-21

申请号：US16543093

申请日：2019-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-Geun Kim ,  In-Hwan Doh ,  Joo-Young Hwang ,  Seung-Uk Shin ,  Min-Seok Ko ,  Jae-Yoon Choi

IPC: G06F12/02 ,  G06F9/38 ,  G06F12/10

Abstract: A storage device includes a non-volatile memory including a plurality of memory blocks. The storage device performs an alignment operation in response to receipt of an align command. The alignment operation converts a received logical address of a logical segment into a physical address and allocates the physical address to a physical block address corresponding to a free block. The storage device is further configured to performs a garbage collection in units of the physical block address that indicates one memory block.