公开(公告)号：US20170024139A1

公开(公告)日：2017-01-26

申请号：US15207591

申请日：2016-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Soo SHIM ,  Jinsung JUNG

IPC: G06F3/06

CPC classification number: G06F3/0604 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0656 ,  G06F3/0659 ,  G06F3/0665 ,  G06F3/0679 ,  G11C29/44 ,  G11C29/72 ,  G11C29/74 ,  G11C29/808 ,  G11C29/82 ,  G11C2029/4402

Abstract: A nonvolatile memory device is provided. The nonvolatile memory device includes a memory cell array comprising a first area that stores memory management information and a second area that stores user data, a decoder configured to select at least one of rows of the first area or the second area based on an address, a page buffer configured to store data in memory cells connected to the selected at least one row or to detect data stored in the memory cells, and control logic configured to control the decoder and the page buffer in response to a specific command, to access the first area. The memory management information is iteratively programmed by a specific memory unit and is written at different columns of specific memory units.

Abstract translation: 提供非易失性存储器件。 非易失性存储器件包括存储单元阵列，其包括存储存储器管理信息的第一区域和存储用户数据的第二区域;解码器，被配置为基于地址选择第一区域或第二区域中的至少一个行， 页面缓冲器，被配置为将数据存储在连接到所选择的至少一行的存储器单元中或者用于检测存储在存储器单元中的数据;以及控制逻辑，被配置为响应于特定命令来控制解码器和页面缓冲器以访问 第一区。 存储器管理信息由特定存储器单元迭代地编程，并被写入特定存储器单元的不同列。