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公开(公告)号:US20230420610A1
公开(公告)日:2023-12-28
申请号:US18213608
申请日:2023-06-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Mingu Ko , Seungmi Son , Dongmyung Shin , Seongseok Yang , Jongho Lee
CPC classification number: H01L33/10 , H01L33/405 , H01L33/385
Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer including an upper surface having a first region and a second region surrounding the first region, and active layer, and a second conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer being provided in sequence on the first region, a transparent electrode layer provided on the second conductivity-type semiconductor layer, and a distributed Bragg reflector (DBR) layer provided on the insulating layer, the DBR including a first insulating film having a first refractive index and a second insulating film having a second refractive index different from the first refractive index, where the insulating layer and the DBR layer includes a plurality of holes connected to a contact region of the transparent electrode layer.