公开(公告)号：US20230420610A1

公开(公告)日：2023-12-28

申请号：US18213608

申请日：2023-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mingu Ko ,  Seungmi Son ,  Dongmyung Shin ,  Seongseok Yang ,  Jongho Lee

IPC: H01L33/10 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/10 ,  H01L33/405 ,  H01L33/385

Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer including an upper surface having a first region and a second region surrounding the first region, and active layer, and a second conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer being provided in sequence on the first region, a transparent electrode layer provided on the second conductivity-type semiconductor layer, and a distributed Bragg reflector (DBR) layer provided on the insulating layer, the DBR including a first insulating film having a first refractive index and a second insulating film having a second refractive index different from the first refractive index, where the insulating layer and the DBR layer includes a plurality of holes connected to a contact region of the transparent electrode layer.