公开(公告)号：US20230262962A1

公开(公告)日：2023-08-17

申请号：US18107589

申请日：2023-02-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Miso MYUNG ,  Keunnam KIM ,  Euna KIM ,  Huijung KIM ,  Sangho LEE

IPC分类号： H10B12/00

CPC分类号： H10B12/482 ,  H10B12/315 ,  H10B12/34 ,  H10B12/02

摘要： An integrated circuit device includes a substrate having an active area, bit line structures on the substrate, the bit line structures including an insulating spacer on each sidewall thereof, a buried contact between the bit line structures, the buried contact being connected to the active area, an insulation capping pattern on each of the bit line structures, a barrier conductive layer covering side surfaces of the insulation capping pattern, and an upper surface and side surfaces of the insulating spacer, and a landing pad electrically connected to the buried contact, the landing pad vertically overlapping one of the bit line structures on the insulation capping pattern and the barrier conductive layer.