公开(公告)号：US20180026112A1

公开(公告)日：2018-01-25

申请号：US15720812

申请日：2017-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moonkyu PARK ,  Hoonjoo NA ,  Jaeyeol SONG ,  Sangjin HYUN

IPC: H01L29/49 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/423 ,  H01L27/092 ,  H01L21/8234

CPC classification number: H01L29/4966 ,  H01L21/82345 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/785

Abstract: A semiconductor device includes a semiconductor substrate having a first area and a second area, and a first gate pattern on the first area and a second gate pattern on the second area. The first gate pattern includes a first gate insulating pattern on the first area, a first gate barrier pattern on the first gate insulating pattern, and a first work function metal pattern on the first gate barrier pattern. The second gate pattern includes a second gate insulating pattern on the second area, a second gate barrier pattern on the second gate insulating pattern, and a second work function metal pattern on the second gate barrier pattern. The first gate barrier pattern includes a metal material different than the second gate barrier pattern.