公开(公告)号：US20190115077A1

公开(公告)日：2019-04-18

申请号：US16003848

申请日：2018-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoyoung Shin ,  Myeonghee Oh

IPC: G11C16/10 ,  G11C16/08 ,  G11C16/24 ,  G11C16/04 ,  G11C11/4074 ,  G11C7/04 ,  H01L29/788

Abstract: A flash memory device includes a first memory cell, a second memory cell, a row decoder, and a bias generator. The first memory cell is a selected memory cell, and the second memory cell is an unselected memory cell connected with a bit line that is connected to the first memory cell. The row decoder controls a word line voltage to be applied to the first memory cell and controls an unselected source line voltage to be applied to the second memory cell. The bias generator generates the word line voltage based on a threshold voltage of a word line transistor changing with an ambient temperature and generates the unselected source line voltage based on a voltage level of the selected bit line.