公开(公告)号：US10056339B2

公开(公告)日：2018-08-21

申请号：US15628349

申请日：2017-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon-Woo Jang ,  Junghwan Park ,  Ramakanth Kappaganthu ,  Sungjin Kim ,  Junyong Noh ,  Jung-Hoon Han ,  Seung Soo Kim ,  Sungjin Kim ,  Sojung Lee

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L23/58

CPC classification number: H01L23/562 ,  H01L23/585 ,  H01L2924/3512

Abstract: A semiconductor device includes a substrate, a first insulation layer, data storage elements, a contact plug, and a first dummy dam. The first insulation layer is on the substrate and includes a pad region and a peripheral region adjacent to the pad region. The data storage elements are on the pad region of the first insulation layer. The contact plug penetrates the first insulation layer on the peripheral region. The first dummy dam penetrates the first insulation layer and is disposed between the data storage elements and the contact plug.