公开(公告)号：US20240258239A1

公开(公告)日：2024-08-01

申请号：US18427795

申请日：2024-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGBONG LEE ,  Seowoo Nam ,  SUNGHO SEO ,  SEOKMYEONG KANG ,  KyuHoon Choi ,  SEUNGSEOK HA

IPC: H01L23/535 ,  H01L21/768

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76832 ,  H01L21/76895

Abstract: A semiconductor device includes: a first interlayer insulating layer disposed on a substrate; a first conductive line disposed in the first interlayer insulating layer and having a protrusion protruding above an upper side of the first interlayer insulating layer; an etch stop layer disposed on the first interlayer insulating layer and the first conductive line; and a via passing through the etch stop layer and contacting the first conductive line, wherein the etch stop layer includes a first etch stop layer having a curved shape in a cross-sectional view and a second etch stop layer disposed on the first etch stop layer and having a thickness variation.