公开(公告)号：US20190109010A1

公开(公告)日：2019-04-11

申请号：US16058981

申请日：2018-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNWOO LEE ,  SANGROK OH ,  JUNGMO SUNG ,  JONGWOO SUN

IPC: H01L21/308

Abstract: A method of forming patterns of a semiconductor device includes forming a photoresist pattern, which contains a first carbon compound, on a substrate, reforming a top surface of the photoresist pattern to form an upper mask layer which contains a second carbon compound, different from the first carbon compound, on the photoresist pattern, and etching a portion of the substrate using the upper mask layer and the photoresist pattern as an etch mask.