公开(公告)号：US20220199374A1

公开(公告)日：2022-06-23

申请号：US17372131

申请日：2021-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEJIN OH ,  TAEMIN EARMME ,  EUNWOO LEE ,  JONGWOO SUN

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/66

Abstract: A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.

公开(公告)号：US20190109010A1

公开(公告)日：2019-04-11

申请号：US16058981

申请日：2018-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNWOO LEE ,  SANGROK OH ,  JUNGMO SUNG ,  JONGWOO SUN

IPC: H01L21/308

Abstract: A method of forming patterns of a semiconductor device includes forming a photoresist pattern, which contains a first carbon compound, on a substrate, reforming a top surface of the photoresist pattern to form an upper mask layer which contains a second carbon compound, different from the first carbon compound, on the photoresist pattern, and etching a portion of the substrate using the upper mask layer and the photoresist pattern as an etch mask.