公开(公告)号：US20190096890A1

公开(公告)日：2019-03-28

申请号：US15945401

申请日：2018-04-04

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： MYEONG-DONG LEE ,  JUN-WON LEE ,  KI SEOK LEE ,  BONG-SOO KIM ,  SEOK HAN PARK ,  SUNG HEE HAN ,  YOO SANG HWANG

IPC分类号： H01L27/108 ,  H01L23/532 ,  H01L23/522

摘要： A semiconductor device includes a substrate having a trench, a bit line in the trench, a first spacer extending along the trench and at least a portion of a side surface of the bit line and in contact with the bit line, and a second spacer disposed within the trench on the first spacer. The bit line is narrower than the trench, and the first spacer includes silicon oxide. A method of forming a semiconductor device includes forming a trench in a substrate, forming a bit line within the first trench of width less than that of the first trench, and forming a first spacer that lines a portion of the trench and includes silicon oxide in contact with at least a portion of a side surface of the bit line, and forming a second spacer over the first spacer in the trench.