公开(公告)号：US20220013189A1

公开(公告)日：2022-01-13

申请号：US16923334

申请日：2020-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： AMIT BERMAN ,  EVGENY BLAICHMAN ,  RON GOLAN ,  SERGEY GENDEL

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/12 ,  G11C7/06 ,  H03M13/39 ,  G06N20/00

Abstract: A memory system including a memory device and a memory controller including a processor. The memory controller is configured to read outputs from the memory cells in response to a read command from a host and to convert the read outputs to a first codeword. The processor performs a first error correcting code (ECC) operation on the first codeword. The processor is further configured to apply, for each selected memory cell among the memory cells, a corresponding one of the read outputs and at least one related feature as input features to a machine learning algorithm to generate a second codeword, and the memory controller is configured to perform a second ECC operation on the second codeword, when the first ECC operation fails.