公开(公告)号：US20230326740A1

公开(公告)日：2023-10-12

申请号：US17994181

申请日：2022-11-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINJUNG KIM ,  HYUNGSUK MOON ,  SEUNGKOO SHIN ,  SANGHWANG PARK ,  HYEJOO YOON

IPC: H01L21/02 ,  H01L21/268

CPC classification number: H01L21/02126 ,  H01L21/02595 ,  H01L21/02532 ,  H01L21/268

Abstract: A substrate processing method includes; forming a silicon film on a substrate, irradiating the silicon film with microwaves, and soaking the silicon film in liquid heavy water.