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    IMAGE SENSOR
    1.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20170207263A1

    公开(公告)日：2017-07-20

    申请号：US15408085

    申请日：2017-01-17

    Applicant: Samsung Electronics Co., Ltd .

    Inventor： Donghyuk Park ,  SEUNGWON CHA ,  Cheolju KANG ,  YITAE KIM ,  JONGEUN PARK ,  JUNGCHAK AHN ,  Yujung CHOI

    IPC: H01L27/146

    CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    Abstract: An image sensor and a method of fabricating the same are disclosed. The image sensor may include a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer, a well impurity layer, a floating diffusion region, and a transfer gate. When viewed in a plan view, a lower portion of the transfer gate may include a first surface in contact with the device isolation layer, a second surface substantially perpendicular to the first surface, and a third surface connected to the first and second surfaces. The third surface may face the floating diffusion region. A first portion of a gate insulating layer may be adjacent to the third surface and thinner than a portion adjacent to the first surface or the second surface, and this may facilitate more efficient transfer of an electron from the photoelectric conversion layer to the floating diffusion region.

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