公开(公告)号：US20170207263A1

公开(公告)日：2017-07-20

申请号：US15408085

申请日：2017-01-17

Applicant: Samsung Electronics Co., Ltd .

Inventor： Donghyuk Park ,  SEUNGWON CHA ,  Cheolju KANG ,  YITAE KIM ,  JONGEUN PARK ,  JUNGCHAK AHN ,  Yujung CHOI

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

Abstract: An image sensor and a method of fabricating the same are disclosed. The image sensor may include a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer, a well impurity layer, a floating diffusion region, and a transfer gate. When viewed in a plan view, a lower portion of the transfer gate may include a first surface in contact with the device isolation layer, a second surface substantially perpendicular to the first surface, and a third surface connected to the first and second surfaces. The third surface may face the floating diffusion region. A first portion of a gate insulating layer may be adjacent to the third surface and thinner than a portion adjacent to the first surface or the second surface, and this may facilitate more efficient transfer of an electron from the photoelectric conversion layer to the floating diffusion region.

公开(公告)号：US20170207267A1

公开(公告)日：2017-07-20

申请号：US15410859

申请日：2017-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONGHYUK PARK ,  SEUNGWON CHA ,  CHEOLJU KANG ,  YITAE KIM ,  JONGEUN PARK ,  JUNGCHAK AHN ,  YUJUNG CHOI

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/374 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor is provided. The image sensor includes a light shielding layer having a grid structure corresponding to a device isolation layer defining a plurality of pixel regions. The light shielding layer includes holes exposing the plurality of pixel regions, respectively. The light shielding layer is connected to a charge pump applying a negative voltage.

公开(公告)号：US20200335536A1

公开(公告)日：2020-10-22

申请号：US16917309

申请日：2020-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WONCHUL CHOI ,  Min JANG ,  YITAE KIM ,  HEEGEUN JEONG

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.

公开(公告)号：US20180190692A1

公开(公告)日：2018-07-05

申请号：US15837497

申请日：2017-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WONCHUL CHOI ,  Min JANG ,  YITAE KIM ,  HEEGEUN JEONG

IPC: H01L27/146 ,  H04N5/374

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.