公开(公告)号：US20150039809A1

公开(公告)日：2015-02-05

申请号：US14299505

申请日：2014-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SIHWAN KIM ,  SANGYONG YOON ,  KYUNGRYUN KIM

IPC: G11C16/34 ,  G11C11/406

CPC classification number: G11C16/3404 ,  G11C16/0483 ,  G11C16/10

Abstract: A program method for a nonvolatile memory system including a reprogram operation that does not require a reload of first program data to page buffers of a constituent nonvolatile memory device between execution of a first coarse program step and execution of a first fine program step being performed after the execution of an intervening second coarse program step.

Abstract translation: 一种非易失性存储器系统的程序方法，包括：在执行第一粗略程序步骤和执行第一精细程序步骤之后执行第一程序数据的第一程序数据不需要重新加载组成非易失性存储器件的页面缓冲器的再编程操作， 执行中间的第二粗程序步骤。