公开(公告)号：US20200266162A1

公开(公告)日：2020-08-20

申请号：US16867634

申请日：2020-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEOK-HO SHIN ,  BONHWI GU ,  HYEKYEONG KWEON ,  SUNGJIN KIM ,  JOODONG KIM ,  JAEPIL LEE ,  DONGWON LIM

IPC: H01L23/00 ,  H01L21/66 ,  H01L23/532 ,  H01L23/535 ,  H01L23/522

Abstract: A semiconductor device includes a semiconductor substrate having a chip region and an edge region, a plurality of connection structures provided in a lower insulating layer of the edge region and arranged at first intervals in a first direction, an upper insulating layer covering the connection structures, and a plurality of redistribution pads disposed on the upper insulating layer and connected to the connection structures, respectively. Each of the redistribution pads includes a pad portion provided on the chip region. The pad portions of the redistribution pads are spaced apart from the connection structures by a first distance in a second direction intersecting the first direction when viewed in a plan view.

公开(公告)号：US20190221535A1

公开(公告)日：2019-07-18

申请号：US16140252

申请日：2018-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEOK-HO SHIN ,  BONHWI GU ,  HYEKYEONG KWEON ,  SUNGJIN KIM ,  JOODONG KIM ,  JAEPIL LEE ,  DONGWON LIM

IPC: H01L23/00 ,  H01L21/66 ,  H01L23/535 ,  H01L23/522

Abstract: A semiconductor device includes a semiconductor substrate having a chip region and an edge region, a plurality of connection structures provided in a lower insulating layer of the edge region and arranged at first intervals in a first direction, an upper insulating layer covering the connection structures, and a plurality of redistribution pads disposed on the upper insulating layer and connected to the connection structures, respectively. Each of the redistribution pads includes a pad portion provided on the chip region. The pad portions of the redistribution pads are spaced apart from the connection structures by a first distance in a second direction intersecting the first direction when viewed in a plan view.

公开(公告)号：US20180040571A1

公开(公告)日：2018-02-08

申请号：US15628349

申请日：2017-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYEON-WOO JANG ,  JUNGHWAN PARK ,  RAMAKANTH KAPPAGANTHU ,  SUNGJIN KIM ,  JUNYONG NOH ,  JUNG-HOON HAN ,  SEUNG SOO KIM ,  SUNGJIN KIM ,  SOJUNG LEE

IPC: H01L23/00

CPC classification number: H01L23/562 ,  H01L23/585 ,  H01L2924/3512

Abstract: A semiconductor device includes a substrate, a first insulation layer, data storage elements, a contact plug, and a first dummy dam. The first insulation layer is on the substrate and includes a pad region and a peripheral region adjacent to the pad region. The data storage elements are on the pad region of the first insulation layer. The contact plug penetrates the first insulation layer on the peripheral region. The first dummy dam penetrates the first insulation layer and is disposed between the data storage elements and the contact plug.