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    NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
    1.
    发明申请
    NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME 有权
    非易失性存储器件和包括其的存储器系统

    公开(公告)号：US20150287475A1

    公开(公告)日：2015-10-08

    申请号：US14546039

    申请日：2014-11-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： SUNGJUN KIM ,  SANGTAE KIM ,  BYUNGHOON JEONG

    IPC: G11C17/18 ,  G11C17/16

    CPC classification number: G11C17/18 ,  G11C13/0007 ,  G11C13/004 ,  G11C17/16 ,  G11C17/165 ,  G11C29/78 ,  G11C2013/0042 ,  G11C2213/71 ,  G11C2213/72

    Abstract: A nonvolatile memory device is provided. The nonvolatile memory device includes a memory cell array, an anti-fuse cell array, a sense amplifier, a page buffer, and a control logic. The memory cell array includes memory cells connected to word lines and bit lines. The anti-fuse cell array stores setting information for controlling the memory cell array. The anti-fuse cell array includes anti-fuse cells connected to the bit lines. The sense amplifier is connected to the bit lines to sense the memory cells or the anti-fuse cells. The page buffer stores data that is read out from the memory cells or the anti-fuse cells. The control logic controls the sense amplifiers and the page buffer to read out data from the memory cell array or the anti-fuse cell array.

    Abstract translation: 提供非易失性存储器件。 非易失性存储器件包括存储单元阵列，反熔丝单元阵列，读出放大器，页面缓冲器和控制逻辑。 存储单元阵列包括连接到字线和位线的存储单元。 反熔丝单元阵列存储用于控制存储单元阵列的设置信息。 反熔丝单元阵列包括连接到位线的反熔丝单元。 读出放大器连接到位线以感测存储单元或反熔丝单元。 页面缓冲器存储从存储单元或反熔丝单元读出的数据。 控制逻辑控制读出放大器和页缓冲器从存储单元阵列或反熔丝单元阵列中读出数据。

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