公开(公告)号：US20220199150A1

公开(公告)日：2022-06-23

申请号：US17529900

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Saemi SONG ,  Dokyun KIM ,  Yeonkyu CHOI ,  Doohee HWANG

IPC: G11C11/406

Abstract: Provided are a memory device and a method of refreshing the memory device regardless of a refresh rate multiplier for a temperature. In response to a refresh command at each base refresh rate (tREFi) based on a measured temperature, a memory device refreshes M memory cell rows at room temperature, refreshes 2M memory cell rows at a high temperature, and refreshes (½)M memory cell rows at a low temperature. The memory device refreshes (n+1)*M memory cell rows at a base refresh rate tREFi in response to a refresh command applied after n skipped base refresh rates, and refreshes (n+1)*M memory cell rows at a base refresh rate tREFi in response to a pulling-in refresh command.