公开(公告)号：US20190006150A1

公开(公告)日：2019-01-03

申请号：US15864529

申请日：2018-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Bo SHIM ,  Myung Sun CHOI ,  Nam Jun KANG ,  Doug Yong SUNG ,  Sang Min JEONG ,  Peter Byung H HAN

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: A semiconductor manufacturing device includes a plasma chamber, a source power supply, and first and second bias power supplies. The source power supply applies a first source voltage to the plasma chamber at a first time and a second source voltage to the plasma chamber at a second time. The first bias power supply applies a first turn-on voltage to the plasma chamber at the first time and a first turn-off voltage to the plasma chamber at the second time. The second bias power supply applies a second turn-off voltage to the plasma chamber at the first time and a second turn-on voltage to the plasma chamber at the second time. The plasma chamber forms plasmas of different conditions from a gas mixture in the plasma chamber based on the source, turn-on, and turn-off voltages.