公开(公告)号：US20250140568A1

公开(公告)日：2025-05-01

申请号：US18640322

申请日：2024-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SangHyuk YOO ,  Songyun KANG ,  Jiwon SON

IPC: H01L21/3115 ,  H01L21/02 ,  H01L21/311

Abstract: The present disclosure relates to methods of manufacturing semiconductor devices, and a method for manufacturing a semiconductor device according to an embodiment comprises: forming an insulating layer including a silicon compound on a substrate; forming a trench by recessing a portion of the insulating layer toward the substrate, wherein the trench is adjacent a first portion of the insulating layer and a second portion of the insulating layer; implanting a first impurity with a first concentration in the first portion of the insulating layer; implanting a second impurity with a second concentration in the second portion of the insulating layer, wherein the implanting the first impurity and the implanting the second impurity are performed simultaneously; and etching the first portion of the insulating layer after the implanting the first impurity, wherein the first impurity and the second impurity each include at least one of boron and arsenic.