公开(公告)号：US09111991B2

公开(公告)日：2015-08-18

申请号：US14049435

申请日：2013-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SangHyun Lee ,  Sungsam Lee ,  Dongkak Lee

IPC: H01L21/76

CPC classification number: H01L21/76 ,  H01L21/76229 ,  H01L21/823431

Abstract: A method of fabricating a semiconductor device is provided. A fin portion protruding from a substrate is formed. A sacrificial layer is formed to cover top and side surfaces of the fin portion. A gate dielectric is formed on the fin portion by oxidizing the sacrificial layer.

Abstract translation: 提供一种制造半导体器件的方法。 形成从基板突出的翅片部。 形成牺牲层以覆盖翅片部分的顶表面和侧表面。 通过氧化牺牲层，在鳍部上形成栅极电介质。

公开(公告)号：US20140120691A1

公开(公告)日：2014-05-01

申请号：US14049435

申请日：2013-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SangHyun Lee ,  Sungsam Lee ,  Dongkak Lee

IPC: H01L21/76

CPC classification number: H01L21/76 ,  H01L21/76229 ,  H01L21/823431

Abstract: A method of fabricating a semiconductor device is provided. A fin portion protruding from a substrate is formed. A sacrificial layer is formed to cover top and side surfaces of the fin portion. A gate dielectric is formed on the fin portion by oxidizing the sacrificial layer.

Abstract translation: 提供一种制造半导体器件的方法。 形成从基板突出的翅片部。 形成牺牲层以覆盖翅片部分的顶表面和侧表面。 通过氧化牺牲层，在鳍部上形成栅极电介质。