公开(公告)号：US20150294876A1

公开(公告)日：2015-10-15

申请号：US14593236

申请日：2015-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungsam Lee ,  Satoru Yamada ,  Min Hee Cho

IPC: H01L21/28 ,  H01L21/3105 ,  H01L21/762

CPC classification number: H01L29/40117 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/76229

Abstract: Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming a first oxide layer in a trench of a substrate, and forming a second oxide layer on the first oxide layer. Moreover, the method includes forming a third oxide layer on the second oxide layer.

Abstract translation: 提供了形成半导体器件的方法。 形成半导体器件的方法包括在衬底的沟槽中形成第一氧化物层，并在第一氧化物层上形成第二氧化物层。 此外，该方法包括在第二氧化物层上形成第三氧化物层。

公开(公告)号：US09111991B2

公开(公告)日：2015-08-18

申请号：US14049435

申请日：2013-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SangHyun Lee ,  Sungsam Lee ,  Dongkak Lee

IPC: H01L21/76

CPC classification number: H01L21/76 ,  H01L21/76229 ,  H01L21/823431

Abstract: A method of fabricating a semiconductor device is provided. A fin portion protruding from a substrate is formed. A sacrificial layer is formed to cover top and side surfaces of the fin portion. A gate dielectric is formed on the fin portion by oxidizing the sacrificial layer.

Abstract translation: 提供一种制造半导体器件的方法。 形成从基板突出的翅片部。 形成牺牲层以覆盖翅片部分的顶表面和侧表面。 通过氧化牺牲层，在鳍部上形成栅极电介质。

公开(公告)号：US10431680B2

公开(公告)日：2019-10-01

申请号：US15391888

申请日：2016-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungsam Lee ,  Junsoo Kim ,  Hyoshin Ahn ,  Satoru Yamada ,  Joohyun Jeon ,  MoonYoung Jeong ,  Chunhyung Chung ,  Min Hee Cho ,  Kyo-Suk Chae ,  Eunae Choi

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/04

Abstract: A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.

公开(公告)号：US09520401B2

公开(公告)日：2016-12-13

申请号：US14197588

申请日：2014-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungsam Lee

IPC: H01L21/336 ,  H01L27/108 ,  H01L27/02

CPC classification number: H01L27/10814 ,  H01L27/0207 ,  H01L27/10823 ,  H01L27/10885 ,  H01L27/10891

Abstract: A semiconductor device includes a plurality of first signal lines crossing a plurality of second signal lines. At least one of the first signal lines has a first end to receive a first voltage and a second end to receive a second voltage. The first and second voltages are applied simultaneously to respective ones of the first and second ends. A difference between the first and second voltages causes joule heating in the at least one first signal line. The joule heating may correct one or more defects in the semiconductor device.

Abstract translation: 半导体器件包括与多条第二信号线交叉的多条第一信号线。 第一信号线中的至少一个具有接收第一电压的第一端和用于接收第二电压的第二端。 第一和第二电压同时施加到第一和第二端中的相应的一个。 第一和第二电压之间的差异导致至少一个第一信号线中的焦耳加热。 焦耳加热可以校正半导体器件中的一个或多个缺陷。

公开(公告)号：US20140120691A1

公开(公告)日：2014-05-01

申请号：US14049435

申请日：2013-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SangHyun Lee ,  Sungsam Lee ,  Dongkak Lee

IPC: H01L21/76

CPC classification number: H01L21/76 ,  H01L21/76229 ,  H01L21/823431

Abstract: A method of fabricating a semiconductor device is provided. A fin portion protruding from a substrate is formed. A sacrificial layer is formed to cover top and side surfaces of the fin portion. A gate dielectric is formed on the fin portion by oxidizing the sacrificial layer.

Abstract translation: 提供一种制造半导体器件的方法。 形成从基板突出的翅片部。 形成牺牲层以覆盖翅片部分的顶表面和侧表面。 通过氧化牺牲层，在鳍部上形成栅极电介质。