公开(公告)号：US20210098232A1

公开(公告)日：2021-04-01

申请号：US16860745

申请日：2020-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjin AN ,  Minseop PARK ,  Chanyeong JEONG ,  Sunggil KANG ,  Yeongkwang LEE

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/683

Abstract: A substrate processing apparatus includes a process chamber including a plasma generation region configured to receive at least one first process gas and have first radio-frequency (RF) power applied thereto, to generate plasma; a gas distribution region configured to supply the at least one first process gas to the plasma generation region; a gas mixing region configured to receive at least one second process gas and radicals generated in the plasma generation region to generate an etchant based on the radicals being mixed with the at least one second process gas; a pedestal on which a substrate is disposed; a processing region in which the pedestal is installed; and a shower head configured to supply the etchant from the gas mixing region to the processing region, the substrate disposed on the pedestal being processed by the etchant. The gas mixing region is separate from each of the plasma generation region and the processing region.

公开(公告)号：US20230071985A1

公开(公告)日：2023-03-09

申请号：US17749800

申请日：2022-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woorim LEE ,  Sunggil KANG ,  Minhyoung KIM ,  Inseong KIM ,  Seokyoung PARK ,  Sangjin AN ,  Inhye JEONG ,  Kyusik CHOI

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/66

Abstract: A substrate processing apparatus includes first to fourth sets of inner surfaces that at least partially define a plasma forming region, a gas supply region, gas mixing region, and a substrate processing region, respectively, where the substrate processing apparatus is configured to form a plasma within the plasma forming region, supply a process gas from the gas supply region to the plasma forming region, form an etchant in the gas mixing region based on recombination of radicals supplied from the plasma forming region, and process a substrate based on the etchant within the substrate processing region; a shower head between the gas mixing region and the substrate processing region and configured to supply the etchant to the substrate processing region; a coating layer covering a surface of the shower head and including nickel (Ni) containing phosphorus (P); and a heater configured to control a surface temperature of the shower head.