公开(公告)号：US20130307040A1

公开(公告)日：2013-11-21

申请号：US13785056

申请日：2013-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungchak AHN ,  Kyungho LEE ,  Heegeun JEONG ,  Sangjun CHOI ,  Jongeun PARK

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643

Abstract: Provided are image sensors and methods of fabricating the same. The image sensor has a transfer gate, which may be configured to include a buried portion having a flat bottom surface and a rounded lower corner. This structure of the buried portion enables to transfer electric charges stored in the photoelectric conversion part effectively.

Abstract translation: 提供图像传感器及其制造方法。 图像传感器具有传输门，其可以被配置为包括具有平坦底表面和圆形下角的掩埋部分。 埋入部分的这种结构能够有效地转移存储在光电转换部分中的电荷。