公开(公告)号：US20240120357A1

公开(公告)日：2024-04-11

申请号：US18207786

申请日：2023-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon KIM ,  Jonguk KIM ,  Heegeun JEONG

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes a substrate having a plurality of first pixel regions configured to generate image information and a plurality of second pixel regions configured to detect phase information, a grid pattern on the substrate and dividing a plurality of spaces corresponding to each of the plurality of first pixel regions and the plurality of second pixel regions. The image sensor also includes a plurality of color filters respectively in first spaces of the plurality of spaces, excluding second spaces corresponding to the plurality of second pixel regions, a plurality of polarization patterns respectively in the second spaces and partitioning the second spaces, and a microlens layer including a plurality of first microlenses respectively on the plurality of color filters.

公开(公告)号：US20220223636A1

公开(公告)日：2022-07-14

申请号：US17570884

申请日：2022-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon KIM ,  Jinju JEON ,  Heegeun JEONG

IPC: H01L27/146 ,  H04N5/369

Abstract: An image sensor including: a semiconductor substrate having a first surface and a second surface; a pixel device isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the pixel device isolation film defines pixels in the semiconductor substrate, and includes a conductive layer; and a device isolation structure located inside a device isolation trench that extends from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the device isolation structure includes a conductive liner electrically connected to the conductive layer, wherein a negative bias is applied to the conductive layer and the conductive liner.

公开(公告)号：US20220231063A1

公开(公告)日：2022-07-21

申请号：US17646860

申请日：2022-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGWOO CHUNG ,  Sooeon KIM ,  Hanseok KIM ,  Heegeun JEONG

IPC: H01L27/146

Abstract: An image sensor includes a substrate that includes a pixel regions; an insulating structure on the substrate; a grid pattern structure on the insulating structure; color filters on the insulating structure; and microlenses on the color filters. The grid pattern structure includes a first pattern portion and second pattern portions. The first pattern portion includes a first material pattern on the insulating structure, and a second material pattern on the first material pattern. The first material pattern is formed of a first material, and the second material pattern and the second pattern portions are formed of a second material. The first pattern portion includes parallel first horizontal straight portions, and parallel first vertical straight portions, and each of the second pattern portions includes a second horizontal straight portion parallel to the first horizontal straight portions and a second vertical straight portion parallel to the first vertical straight portions.

公开(公告)号：US20130307040A1

公开(公告)日：2013-11-21

申请号：US13785056

申请日：2013-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungchak AHN ,  Kyungho LEE ,  Heegeun JEONG ,  Sangjun CHOI ,  Jongeun PARK

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643

Abstract: Provided are image sensors and methods of fabricating the same. The image sensor has a transfer gate, which may be configured to include a buried portion having a flat bottom surface and a rounded lower corner. This structure of the buried portion enables to transfer electric charges stored in the photoelectric conversion part effectively.

Abstract translation: 提供图像传感器及其制造方法。 图像传感器具有传输门，其可以被配置为包括具有平坦底表面和圆形下角的掩埋部分。 埋入部分的这种结构能够有效地转移存储在光电转换部分中的电荷。

公开(公告)号：US20230420476A1

公开(公告)日：2023-12-28

申请号：US18342376

申请日：2023-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoemin JEONG ,  Seungjoo NAH ,  Heegeun JEONG ,  Soongeul CHOI ,  Dongmin HAN

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: An image sensor includes a chip structure including first and second regions. The chip structure further includes a substrate having a first surface, a second surface, and a recess portion, a plurality of photoelectric conversion devices included in the substrate, at least one conductive layer on a sidewall and a bottom surface of the recess portion and on the horizontal insulating layer in the second region, a first passivation layer on a side surface of the conductive layer in the recess portion and the conductive layer on the horizontal insulating layer, and a second passivation layer on side surface of the first passivation layer in the recess portion.

公开(公告)号：US20220415954A1

公开(公告)日：2022-12-29

申请号：US17836108

申请日：2022-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinju JEON ,  Youngwoo CHUNG ,  Hanseok KIM ,  Heegeun JEONG

IPC: H01L27/146

Abstract: An image sensor includes: a first semiconductor chip having a pixel region, a peripheral region, and a first wiring layer; and a second semiconductor chip combined with the first semiconductor chip, and including a second wiring layer, wherein the pixel region includes an active pixel region and a dummy pixel region, wherein the pixels are separated from one another by deep trench isolations (DTI) passing through a silicon layer, wherein a backside contact applying a negative (−) voltage to a conductive layer of each of the DTIs is arranged in the dummy pixel region and passes through the silicon layer, wherein the backside contact contacts the conductive layer of each of the DTIs, and wherein a through via is formed in the peripheral region, and wiring lines of the first wiring layer are connected to wiring lines of a second wiring layer through the through via.

公开(公告)号：US20230082070A1

公开(公告)日：2023-03-16

申请号：US17744045

申请日：2022-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeongjae BYEON ,  Jinyoung KIM ,  Seungjoo NAH ,  Heegeun JEONG

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first region and a second region surrounding the first region, a light sensing element in the substrate, a planarization layer on the light sensing element, a color filter array layer including color filters on the planarization layer on the first region of the substrate, a light blocking metal pattern on the planarization layer on the second region of the substrate, a dummy color filter layer on the light blocking metal pattern on a portion of the second region adjacent to the first region of the substrate, and microlens on the color filter array layer. Active pixels are in the first region, and optical black (OB) pixels are in the second region.

公开(公告)号：US20220028915A1

公开(公告)日：2022-01-27

申请号：US17327885

申请日：2021-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mihye JANG ,  Seungjoo NAH ,  Minho JANG ,  Heegeun JEONG

IPC: H01L27/146 ,  H01L27/30 ,  H01L23/00 ,  H01L21/768

Abstract: An image sensor includes a first structure including a first substrate, and a first internal wiring structure on the first substrate. The first substrate includes an active pixel region and a through electrode region around the active pixel region. The first internal wiring structure includes a plurality of first internal wiring patterns. The image sensor further includes a second structure including a second substrate and a second internal wiring structure on the second substrate. The second substrate is arranged on the first substrate. The image sensor additionally includes a through electrode layer arranged in the through electrode region to at least partially fill a through electrode trench, which penetrates the first substrate, and to connect the first internal wiring structure to the second internal wiring structure.