公开(公告)号：US20250028662A1

公开(公告)日：2025-01-23

申请号：US18626393

申请日：2024-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghan Lee ,  Sooyoung Ji ,  Seohyun Shin ,  Hyunjoon Yoo

IPC: G06F13/28 ,  G06F13/42

Abstract: A computational storage device includes an interface exchanging a signal with a first external source, a non-volatile memory device, a storage controller, a device memory, and a computation engine. The interface receives an indirect usage request instructing the computation engine to perform a second computation for second input data from a second external source while performing a first computation for first input data acquired from the first external source. The computation engine provides the first input data and first intermediate data generated when performing the first computation to an external computational storage device in response to the indirect usage request, requests the first computation from the external computational storage device, performs the second computation for the second input data loaded from the non-volatile memory device to the device memory, and outputs second result data generated by completing the second computation to the second external source through the interface.

公开(公告)号：US20250036288A1

公开(公告)日：2025-01-30

申请号：US18600370

申请日：2024-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seohyun Shin ,  Kyungduk Lee ,  Sanghwa Jin

IPC: G06F3/06

Abstract: A method of providing an exposure temperature includes generating reference information indicating relationships between an exposure condition and a retention value, where the exposure condition include an exposure temperature and an exposure time of a nonvolatile memory device and the retention value indicates retention characteristic of the nonvolatile memory device, before a power-off time point when the nonvolatile memory device is powered-off, performing a monitoring program operation to write monitoring data in target memory cells included in the nonvolatile memory device, after a power-on time point when the nonvolatile memory device is powered on, generating a measured retention value by performing a monitoring read operation to read data from the target memory cells, and estimating, based on the reference information, a measured exposure temperature corresponding to the measured retention value and a measured exposure time between the power-off time point and the power-on time point.