公开(公告)号：US20230299099A1

公开(公告)日：2023-09-21

申请号：US17991258

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook LIM ,  Seojoo KIM ,  Soeun PARK ,  Sunghyuck CHO

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor is provided. The image sensor includes: a first photodiode (PD) provided in a first area; a second PD provided in a second area, wherein the second area is smaller than and adjacent to the first area; a first floating diffusion region that is provided in the first area and connected to the first PD via a first transfer transistor; a second floating diffusion region that is connected to a power source via a first reset transistor and the first floating diffusion region via a second reset transistor; a third floating diffusion region that is provided in the second area, and is connected to the second PD via the second transfer transistor and the second floating diffusion region via a first switch; and a capacitor connected between the third floating diffusion region and the power source.