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公开(公告)号:US20220157373A1
公开(公告)日:2022-05-19
申请号:US17399402
申请日:2021-08-11
发明人: Yeonkyu CHOI , Dokyun KIM , Seongjin LEE , Doohee HWANG
IPC分类号: G11C11/406 , G11C7/10
摘要: A memory system includes a memory controller and a memory device. The memory controller generates refresh commands periodically by an average refresh interval. The memory device performs a normal refresh operation and a hammer refresh operation during a refresh cycle time. The memory device includes a memory cell array including memory cells connected to a plurality of wordlines, a temperature sensor configured to provide temperature information by measuring an operation temperature of the memory cell array and a refresh controller configured to control the normal refresh operation and the hammer refresh operation. The refresh controller varies a hammer ratio of a unit hammer execution number of the hammer refresh operation executed during the refresh cycle time with respect to a unit normal execution number of the normal refresh operation executed during the refresh cycle time.