公开(公告)号：US20210233995A1

公开(公告)日：2021-07-29

申请号：US17212847

申请日：2021-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Chul SUN ,  Dae Won HA ,  Dong Hoon HWANG ,  Jong Hwa BAEK ,  Jong Min JEON ,  Seung Mo HA ,  Kwang Yong YANG ,  Jae Young PARK ,  Young Su CHUNG

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

公开(公告)号：US20240258313A1

公开(公告)日：2024-08-01

申请号：US18633722

申请日：2024-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bok Young LEE ,  Young Mook OH ,  Hyung Goo LEE ,  Hae Geon JUNG ,  Seung Mo HA

IPC: H01L27/088 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L27/0886 ,  H01L21/76232 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0924

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first base fin protruding from the substrate and extending in a first direction, and a first fin type pattern protruding from the first base fin and extending in the first direction. The first base fin includes a first sidewall and a second sidewall, the first and second sidewalls extending in the first direction, the first sidewall opposite to the second sidewall, the first sidewall of the first base fin at least partially defines a first deep trench, the second sidewall of the first base fin at least partially defines a second deep trench, and a depth of the first deep trench is greater than a depth of the second deep trench.

公开(公告)号：US20220231015A1

公开(公告)日：2022-07-21

申请号：US17509265

申请日：2021-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bok Young LEE ,  Young Mook OH ,  Hyung Goo LEE ,  Hae Geon JUNG ,  Seung Mo HA

IPC: H01L27/088 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/762

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first base fin protruding from the substrate and extending in a first direction, and a first fin type pattern protruding from the first base fin and extending in the first direction. The first base fin includes a first sidewall and a second sidewall, the first and second sidewalls extending in the first direction, the first sidewall opposite to the second sidewall, the first sidewall of the first base fin at least partially defines a first deep trench, the second sidewall of the first base fin at least partially defines a second deep trench, and a depth of the first deep trench is greater than a depth of the second deep trench.

公开(公告)号：US20240047521A1

公开(公告)日：2024-02-08

申请号：US18488381

申请日：2023-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Chul SUN ,  Dae Won HA ,  Dong Hoon HWANG ,  Jong Hwa BAEK ,  Jong Min JEON ,  Seung Mo HA ,  Kwang Yong YANG ,  Jae Young PARK ,  Young Su CHUNG

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L27/0886 ,  H01L21/823431 ,  H01L21/76224 ,  H01L21/823481 ,  H01L29/41791

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

公开(公告)号：US20220189970A1

公开(公告)日：2022-06-16

申请号：US17392377

申请日：2021-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Haegeon JUNG ,  Taeyong KWON ,  Kwang-Yong YANG ,  Youngmook OH ,  Bokyoung LEE ,  Seung Mo HA ,  Hyunggoo LEE

IPC: H01L27/11 ,  H01L27/088 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device includes a substrate having a first memory cell and a second memory cell, the first and second memory cells being adjacent to each other in a first direction, first to fourth memory fins adjacent to each other in the first direction in the first memory cell, the first to fourth memory fins protruding from the substrate, fifth to eighth memory fins adjacent to each other in the first direction in the second memory cell, the fifth to eighth memory fins protruding from the substrate, and a first shallow device isolation layer between the fourth memory fin and the fifth memory fin, a sidewall of the first shallow device isolation layer having an inflection point.