公开(公告)号：US09037783B2

公开(公告)日：2015-05-19

申请号：US13713377

申请日：2012-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Wan Koh ,  Tae-Kyeong Ko

IPC: G06F12/02 ,  G11C5/00

CPC classification number: G06F12/0246 ,  G06F2212/7208 ,  G11C5/00

Abstract: A non-volatile memory device having respective parallel queues is disclosed. The non-volatile memory device includes a plurality of concurrently addressable units. The non-volatile memory device has respective queues for the concurrently addressable units, and transfers a second command to respective queues for the remaining concurrently addressable units while a first command is executed in a part of the concurrently addressable units, and executes a second command in the remaining concurrently addressable units. Accordingly, non-volatile memory device may concurrently access the concurrently addressable units in parallel, and may have high speed.

Abstract translation: 公开了具有各自的并行队列的非易失性存储器件。 非易失性存储器件包括多个可同时寻址的单元。 非易失性存储器件具有用于同时可寻址单元的各自的队列，并且在同时可寻址单元的一部分中执行第一命令时，将第二命令传送到剩余的可寻址单元的各个队列，并且执行第二命令 剩余的可寻址单元。 因此，非易失性存储装置可以并行地同时访问同时可寻址单元，并且可以具有高速度。