公开(公告)号：US20230083493A1

公开(公告)日：2023-03-16

申请号：US17741581

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungwan SHIN ,  Junghoon KANG ,  Gun LEE

IPC: H01L23/00 ,  H01L25/065 ,  H01L23/31 ,  H01L23/29 ,  H01L23/532

Abstract: A semiconductor package includes: a lower redistribution structure including a lower insulating layer and a lower redistribution layer; a semiconductor chip disposed on the lower redistribution structure; connection conductors connected to the lower redistribution layer; an encapsulant disposed on the connection conductors; and an upper redistribution structure including an upper insulating layer and upper redistribution layers, wherein the upper insulating layer is disposed on the encapsulant, wherein the upper redistribution layers are disposed on the upper insulating layer, wherein the connection conductors and the encapsulant form a first step, wherein the upper redistribution layers include first and second upper redistribution layers, wherein the first upper redistribution layer does not overlap the connection conductors, wherein the second upper redistribution layer overlaps the connection conductors, wherein the first and second upper redistribution layers form a second step with a height substantially equal to or smaller than that of the first step.