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公开(公告)号:US11847032B2
公开(公告)日:2023-12-19
申请号:US17208312
申请日:2021-03-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung-Wook Kim , So-Geum Kim , Daehun You , Jaehwan Lim
IPC: G11C7/00 , G06F11/20 , G06F1/28 , G11C11/406 , G11C16/34 , G06F1/3221 , G11C13/00
CPC classification number: G06F11/2015 , G06F1/28 , G06F1/3221 , G11C11/40626 , G11C13/0038 , G11C16/349 , G11C16/3418 , G06F2201/85
Abstract: An electronic device includes: a power supply to supply a first power and a second power; a first solid state drive (SSD) backplane and a second SSD backplane to receive the first power from the power supply, each of the first solid state drive (SSD) backplane and the second SSD backplane including two or more SSDs; and a baseboard to receive the second power from the power supply, to independently power on and power off the first SSD backplane and the second SSD backplane, and to access the SSDs of an SSD backplane that is in a power-on state from among the first SSD backplane and the second SSD backplane. In response to an increase in temperature of an SSD backplane that is in a power-off state, at least one SSD of the SSD backplane that is in the power-off state may be powered on.
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公开(公告)号:US11625193B2
公开(公告)日:2023-04-11
申请号:US17351506
申请日:2021-06-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jae Hwan Lim , Seung-Woo Lim , Sung-Wook Kim , So-Geum Kim , Jae Eun Kim , Dae Hun You , Walter Jun
IPC: G06F3/06
Abstract: A redundant array of independent disks (RAID) storage device including; a memory device including first memory devices configured to store at least one of data chunks and corresponding parity (data chunks/parity) and a second memory device configured to serve as a spare memory region, and a RAID controller including a RAID internal memory configured to store a count table and configured to control performing of a rebuild operation in response to a command received from a host, wherein upon identification of a failed first memory device, the RAID controller accesses used regions of non-failed first memory devices based on the count table and rebuilds data of the failed first memory device using the second memory device.
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