公开(公告)号：US20200083448A1

公开(公告)日：2020-03-12

申请号：US16360500

申请日：2019-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-hyun Cho ,  Song-yi Kim ,  Masayuki Terai

IPC: H01L45/00 ,  H01L43/12

Abstract: A method of manufacturing a memory device includes forming a transistor on a substrate, forming a lower interlayer insulating layer covering the transistor, forming a hydrogen supply layer on the lower interlayer insulating layer, forming a hydrogen blocking layer on the hydrogen supply layer, annealing the transistor, the lower interlayer insulating layer, and the hydrogen supply layer, forming a memory cell on the hydrogen blocking layer after the annealing, and forming an upper interlayer insulating layer surrounding the memory cell and having a third average hydrogen concentration less than the second average hydrogen concentration.

公开(公告)号：US11094882B2

公开(公告)日：2021-08-17

申请号：US16360500

申请日：2019-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-hyun Cho ,  Song-yi Kim ,  Masayuki Terai

IPC: H01L23/522 ,  H01L45/00 ,  H01L43/12

Abstract: A method of manufacturing a memory device includes forming a transistor on a substrate, forming a lower interlayer insulating layer covering the transistor, forming a hydrogen supply layer on the lower interlayer insulating layer, forming a hydrogen blocking layer on the hydrogen supply layer, annealing the transistor, the lower interlayer insulating layer, and the hydrogen supply layer, forming a memory cell on the hydrogen blocking layer after the annealing, and forming an upper interlayer insulating layer surrounding the memory cell and having a third average hydrogen concentration less than the second average hydrogen concentration.