公开(公告)号：US20240045336A1

公开(公告)日：2024-02-08

申请号：US18133118

申请日：2023-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sookyung KIM ,  Chan HWANG ,  Jonghyun JUNG ,  Moosong LEE

IPC: G03F7/20 ,  G03F7/004

CPC classification number: G03F7/2004 ,  G03F7/2022 ,  G03F7/0045

Abstract: A method for forming a resist pattern is disclosed. According to the method, a photosensitive layer is formed on a substrate by using an inorganic photoresist. The photosensitive layer is irradiated with a deep ultraviolet (DUV) light. The photosensitive layer is irradiated with an extreme ultraviolet (EUV) light after the irradiation of the DUV light. The photosensitive layer exposed to the EUV light is heated. The heated photosensitive layer is developed.

公开(公告)号：US20220181146A1

公开(公告)日：2022-06-09

申请号：US17358346

申请日：2021-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sookyung KIM ,  Chan HWANG

IPC: H01L21/027 ,  G03F7/20 ,  G03F1/22

Abstract: A method of manufacturing an integrated circuit (IC) device, the method including forming an underlayer on a feature layer such that the underlayer includes an acid generator; forming an acid-containing underlayer by generating a first acid from the acid generator; forming a photoresist film on the acid-containing underlayer; generating a second acid in a first area of the photoresist film by exposing the first area of the photoresist film; diffusing the first acid from the acid-containing underlayer into the first area of the photoresist film; and forming a photoresist pattern by developing the photoresist film.