公开(公告)号：US11037988B2

公开(公告)日：2021-06-15

申请号：US16802976

申请日：2020-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Uk Kim ,  Jeong Hee Park ,  Seong Geon Park ,  Soon Oh Park ,  Jung Moo Lee

IPC: H01L27/24 ,  H01L45/00 ,  G11C7/18 ,  G11C13/00 ,  G11C8/14

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.