公开(公告)号：US11301388B2

公开(公告)日：2022-04-12

申请号：US16506809

申请日：2019-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Hee Ma ,  Sukhee Lee ,  Jisoo Kim

IPC: G06F12/0868 ,  G06F11/10 ,  G11C29/52

Abstract: A storage device includes a nonvolatile memory device, a memory controller, and a buffer memory. The memory controller determines a first memory block of the nonvolatile memory device, which is targeted for a read reclaim operation, and reads target data from a target area of the first memory block. The target data are stored in the buffer memory. The memory controller reads at least a portion of the target data stored in the buffer memory in response to a read request corresponding to at least a portion of the target area.

公开(公告)号：US11625330B2

公开(公告)日：2023-04-11

申请号：US17688148

申请日：2022-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Hee Ma ,  Sukhee Lee ,  Jisoo Kim

IPC: G06F12/0868 ,  G06F11/10 ,  G11C29/52

Abstract: A storage device includes a nonvolatile memory device, a memory controller, and a buffer memory. The memory controller determines a first memory block of the nonvolatile memory device, which is targeted for a read reclaim operation, and reads target data from a target area of the first memory block. The target data are stored in the buffer memory. The memory controller reads at least a portion of the target data stored in the buffer memory in response to a read request corresponding to at least a portion of the target area.