公开(公告)号：US20240237564A1

公开(公告)日：2024-07-11

申请号：US18236651

申请日：2023-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sukhwan CHUNG ,  Zhe WU ,  Jung Moo LEE ,  Hideki HORII

IPC: H10N70/00 ,  C22C30/00 ,  H10B63/00 ,  H10B63/10 ,  H10N70/20

CPC classification number: H10N70/8828 ,  C22C30/00 ,  H10B63/10 ,  H10B63/24 ,  H10N70/231

Abstract: A variable resistance memory device includes a first electrode; a variable resistance material on the first electrode; and a second electrode on the variable resistance material, wherein the variable resistance material includes an impurity (A) and is represented as ApGexSbyTez, an atomic concentration ‘x’ of the germanium is 0.4≤x≤0.5, an atomic concentration ‘z’ of the tellurium is 0.3≤z