公开(公告)号：US20210328039A1

公开(公告)日：2021-10-21

申请号：US17112357

申请日：2020-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun Hye LEE ,  Sung Soo KIM ,  Ik Soo KIM ,  Woong Sik NAM ,  Dong Hyun ROH

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/10

Abstract: A semiconductor device includes first and second active patterns each extending in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction. A field insulating layer is disposed between the first active pattern and the second active pattern. A first gate structure is disposed on the first active pattern and extends in the second direction. An interlayer insulating layer is disposed between the first gate structure and the field insulating layer. The interlayer insulating layer includes a first part disposed below the first gate structure. A spacer is disposed between the first gate structure and the first part of the interlayer insulating layer.