公开(公告)号：US09362220B2

公开(公告)日：2016-06-07

申请号：US14587291

申请日：2014-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Jong Kim ,  Jae-Hyeon Park ,  Sung-Hoon Bae ,  Jong-Wan Ma

IPC: H01L23/60 ,  H01L23/50 ,  H01L27/02 ,  H01L21/8234 ,  H01L23/00

CPC classification number: H01L23/50 ,  H01L21/823475 ,  H01L23/60 ,  H01L24/05 ,  H01L27/0292 ,  H01L2924/01019 ,  H01L2924/01021

Abstract: A semiconductor device, including a substrate having an active region defined therein, a plurality of bit lines extending on the substrate in a first direction, a plurality of interconnection lines extending on the substrate in a second direction, a pad electrically connected to the plurality of interconnection lines and configured to apply an external voltage, a plurality of metal contacts electrically connecting the interconnection lines and the plurality of bit lines, and a plurality of bit line contacts that are in contact with the active region and electrically connect the plurality of bit lines and the active region, wherein a size of at least some of the bit line contacts and/or at least some of the metal contacts vary based on a distance of the respective bit line contact or the metal contact from the pad.