公开(公告)号：US11874815B2

公开(公告)日：2024-01-16

申请号：US17866600

申请日：2022-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je-Kyeom Jeon ,  Jae-Ju Kim ,  Dong-Ju Roh ,  Sang-Yoon Oh ,  Byung-Ki Lee ,  Sung-Kug Cho

IPC: G06F7/00 ,  G06F16/22 ,  G06F16/27

CPC classification number: G06F16/2255 ,  G06F16/221 ,  G06F16/27

Abstract: A key-value storage device includes a non-volatile memory and a controller. The key-value storage device is configured to communicate with a host and includes a controller and a non-volatile memory. The controller is configured to receive, from the host, a first command including a key, a first chunk among multiple chunks included in a value corresponding to the key, and a first chunk index corresponding to the first chunk. The controller is configured to store mapping information of the first chunk in a mapping table based on the key and the first chunk index. The non-volatile memory is configured to store the key and the first chunk based on the mapping information.

公开(公告)号：US10891074B2

公开(公告)日：2021-01-12

申请号：US16055203

申请日：2018-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Hwa Lee ,  Young-Ho Park ,  Byung-Ki Lee ,  Hyung-Chul Jang ,  Je-Kyeom Jeon ,  Sung-Kug Cho

IPC: G06F3/06 ,  G06F11/14 ,  G06F16/901 ,  G06F16/23

Abstract: A method of operating a key-value storage device includes a key-value storage device receiving from a host a first command including a first key, a first value, and a first snapshot identification (ID), the key-value storage device generating a first snapshot entry including the first snapshot ID, the first key, and a first physical address in a non-volatile memory device at which the first value is written, in response to the received first command, receiving from the host a second command including the first key, a second value, and a second snapshot ID, and in response to the received second command, the key-value storage device generating a second snapshot entry including the second snapshot ID, the first key, and a second physical address in the non-volatile memory device at which the second value is written.