公开(公告)号：US20210167248A1

公开(公告)日：2021-06-03

申请号：US15932000

申请日：2020-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongin YANG ,  Hankyu SEONG ,  Sunghyun SIM ,  Jihye YEON ,  Hanul YOO ,  Jihoon YUN

IPC: H01L33/24 ,  H01L33/50 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L27/15

Abstract: A semiconductor light emitting device including at least one light emitting structure on a substrate, the at least one light emitting structure including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate; a first electrode contacting a substrate-facing surface of the first semiconductor pattern; and a second electrode at least partially surrounding and contacting a sidewall of the second semiconductor pattern.