公开(公告)号：US20240088015A1

公开(公告)日：2024-03-14

申请号：US18462049

申请日：2023-09-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeewoong KIM ,  Hojun KIM ,  Sungmoon LEE ,  Seungmin CHA

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/58

CPC classification number: H01L23/5223 ,  H01L23/5286 ,  H01L23/585

Abstract: An integrated circuit device comprising: a dielectric layer; a first power delivery network layer on a first surface of the dielectric layer; a second power delivery network layer on a second surface of the dielectric layer, wherein the second surface is opposite to the first surface in a vertical direction; and a via capacitor between the first surface and the second surface of the dielectric layer, wherein the via capacitor includes a first via electrode structure and a second via electrode structure that are spaced apart from each other in one of a first horizontal direction and a second horizontal direction that intersects with the first horizontal direction, and a first end portion and a second end portion that is opposite to the first end portion of the via capacitor are electrically connected to the first power delivery network layer and the second power delivery network layer, respectively.